NDLI: Origin of Critical Substrate Bias in Variable Threshold Voltage Complementary MOS (VTCMOS)

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Origin of Critical Substrate Bias in Variable Threshold Voltage Complementary MOS (VTCMOS)

Content Provider	Scilit
Author	Inukai, Takashi Im, Hyunsik Hiramoto, Toshiro
Copyright Year	2002
Description	Journal: Japanese Journal of Applied Physics The origin of the critical substrate bias $(V_{o}$), which is one of the most important parameters for optimum device design in the variable threshold voltage complementary metal oxide semiconductor (VTCMOS), has been systematically investigated and clarified by means of device simulation. $V_{o}$ is regarded as the substrate bias required to compensate for the degraded drivability in devices with a large body effect factor (γ), by a larger threshold voltage shift $(ΔV_{th}$). It is found that $V_{o}$ has two components, which compensate for a large S factor and small transconductance, respectively, and depends on the stand-by off-current $(I_{off,standby}$) and the supply voltage $(V_{dd}$). It is also found that as the technology advances, $V_{o}$ will decrease due to the increase of $I_{off,standby}$ and the reduction of $V_{dd}$, indicating that VTCMOS with large γ devices will maintain its advantage in the future.
Related Links	http://iopscience.iop.org/article/10.1143/JJAP.41.2312/pdf
Ending Page	2315
Page Count	4
Starting Page	2312
ISSN	00214922
e-ISSN	13474065
DOI	10.1143/jjap.41.2312
Journal	Japanese Journal of Applied Physics
Issue Number	Part 1, No
Volume Number	41
Language	English
Publisher	IOP Publishing
Publisher Date	2002-04-30
Access Restriction	Open
Subject Keyword	Journal: Japanese Journal of Applied Physics Information Systems Substrate Bias Threshold Voltage
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy Engineering

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