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Effects of deposition temperature on the properties of sputtered yttrium-doped hafnium oxide thin films
| Content Provider | Scilit |
|---|---|
| Author | Zhao, Peng Zhou, Dayu Liu, Feng Sun, Nana Li, Shuai Dong |
| Copyright Year | 2019 |
| Description | Journal: Materials Research Express Yttrium-doped HfO2 (Y:HfO2) thin films with different deposition temperature were deposited on p-type (100) silicon substrates. The composition and chemical states of each element in the films were investigated by X-ray photoelectron spectroscopy (XPS). The grazing angle incidence X-ray diffraction (GIXRD) patterns suggested the phase transformation of Y:HfO2 thin films as the increase of deposition temperature. The thickness and density of the thin films were calculated by fitting X-ray reflectivity (XRR) data. Root mean square (RMS) roughness was obtained from atomic force microscopy (AFM) images. As the deposition temperature increased, a transition from linear dielectric to ferroelectric behavior happened. Lower leakage current density was obtained by increasing the deposition temperature. |
| Related Links | https://iopscience.iop.org/article/10.1088/2053-1591/ab2518/pdf |
| ISSN | 20531591 |
| e-ISSN | 20531591 |
| DOI | 10.1088/2053-1591/ab2518 |
| Journal | Materials Research Express |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2019-05-28 |
| Access Restriction | Open |
| Subject Keyword | Journal: Materials Research Express Condensed Matter Physics Deposition Temperature Yttrium Doped |
| Content Type | Text |
| Resource Type | Article |
| Subject | Surfaces, Coatings and Films Metals and Alloys Biomaterials Electronic, Optical and Magnetic Materials Polymers and Plastics |
