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Electric-field-enhanced emission from radiation-induced hole traps in p-GaAs
| Content Provider | Scilit |
|---|---|
| Author | Auret, F. D. Goodman, S. A. Meyer, W. E. |
| Copyright Year | 1995 |
| Description | Journal: Semiconductor Science and Technology The electric field dependence of the emission rates of two radiation-induced hole traps in epitaxially grown p-GaAs, H beta$ _{4}$ $(E_{v}$+0.2 eV) and H beta$ _{5}$ $(E_{v}$+0.3 eV), was studied using deep-level transient spectroscopy (DLTS). Both defects exhibit a significant emission enhancement at electric fields above $5*10^{4}$ V $cm^{-1}$. With the enhancement being much more pronounced for H beta 5. Neither of the two defects shows an emission enhancement that is characteristic for a Coulombic well. When modelling the experimental results according to the Poole-Frenkel distortion of a square well, the H beta 4 can be adequately presented by a well with radius 10-20 AA, which is typical of the potential range of a point defect. Using the same formalism, however, the H beta 5 has to be represented by extraordinary wide wells with radii of 35 AA and 162 AA at low- and high-field conditions, respectively. We conclude that the shape of the H beta 5 potential well changes with increasing electric field. |
| Related Links | http://iopscience.iop.org/article/10.1088/0268-1242/10/10/012/pdf |
| Ending Page | 1381 |
| Page Count | 6 |
| Starting Page | 1376 |
| ISSN | 02681242 |
| e-ISSN | 13616641 |
| DOI | 10.1088/0268-1242/10/10/012 |
| Journal | Semiconductor Science and Technology |
| Issue Number | 10 |
| Volume Number | 10 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1995-10-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Semiconductor Science and Technology Applied Physics Electric Field |
| Content Type | Text |
| Resource Type | Article |
| Subject | Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering |
