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Metastable hole traps in high-resistivity silicon
| Content Provider | Scilit |
|---|---|
| Author | Avset, Berit Sundby |
| Copyright Year | 1997 |
| Description | Journal: Semiconductor Science and Technology A new metastable peak due to hole traps has been observed in DLTS measurements on as-processed diodes of high-resistivity floatzone silicon. The peak consists of one or more defects which are transferred to a metastable state in an applied electric field across the pn junction, and the fraction of the defects in the metastable state depends on the field strength. The defect density has a peak between 50 and from the junction and small densities closer to and further from the junction. It is suggested that the defects arise from diffusing impurities which react with precipitates at the edge of a denuded zone. |
| Related Links | http://iopscience.iop.org/article/10.1088/0268-1242/12/3/008/pdf |
| Ending Page | 290 |
| Page Count | 7 |
| Starting Page | 284 |
| ISSN | 02681242 |
| e-ISSN | 13616641 |
| DOI | 10.1088/0268-1242/12/3/008 |
| Journal | Semiconductor Science and Technology |
| Issue Number | 3 |
| Volume Number | 12 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1997-03-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Semiconductor Science and Technology Applied Physics Metastable State Electric Field |
| Content Type | Text |
| Resource Type | Article |
| Subject | Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering |
