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Correlation between Light Emissions from Amorphous-Si:H/SiO 2 and nc-Si/SiO 2 Multilayers
| Content Provider | Scilit |
|---|---|
| Author | Zhong-Yuan, Ma Pei-Gao, Han Wei, Li De-Yuan, Chen De-Yuan, Wei Bo, Qian Jun, Xu Ling, Xu Xin-Fan, Huang Kun-Ji, Chen Duan, Feng |
| Copyright Year | 2007 |
| Description | Journal: Chinese Physics Letters We investigate the properties of light emission from $amorphous-Si:H/SiO_{2}$ and $nc-Si/SiO_{2}$ multilayers (MLs). The size dependence of light emission is well exhibited when the a-Si:H sublayer thickness is thinner than 4 nm and the interface states are well passivated by hydrogen. For the $nc-Si/SiO_{2}$ MLs, the oxygen modified interface states and nanocrystalline silicon play a predominant role in the properties of light emission. It is found that the light emission from $nc-Si/SiO_{2}$ is in agreement with the model of interface state combining with quantum confinement when the size of nc-Si is smaller than 4 nm. The role of hydrogen and oxygen is discussed in detail. |
| Related Links | http://iopscience.iop.org/article/10.1088/0256-307X/24/7/076/pdf |
| Ending Page | 2067 |
| Page Count | 4 |
| Starting Page | 2064 |
| ISSN | 0256307X |
| e-ISSN | 17413540 |
| DOI | 10.1088/0256-307x/24/7/076 |
| Journal | Chinese Physics Letters |
| Issue Number | 7 |
| Volume Number | 24 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2007-06-28 |
| Access Restriction | Open |
| Subject Keyword | Journal: Chinese Physics Letters Quantum Science and Technology |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy |