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The Effect of Multiple Interface States and nc-Si Dots in a Nc-Si Floating Gate MOS Structure Measured by their G — V Characteristics
| Content Provider | Scilit |
|---|---|
| Author | Shi, Yong Ma, Zhong-Yuan Chen, Kun-Ji Jiang, Xiao-Fan Ling, Xu Huang, Xin-Fan Xu, Ling Xu, Jun Feng, Duan |
| Copyright Year | 2013 |
| Description | Journal: Chinese Physics Letters An nc-Si floating gate MOS structure is fabricated by thermal annealing of $SiN_{x}/a-Si/SiO_{2}$. There are nc-Si dots isolated by a-Si due to partial crystallization. Conductance-voltage (G—V) measurements are performed to investigate the effect of multiple interface states including $Si-sub/SiO_{2}$, a-Si related (as-deposited sample) and nc-Si (annealed sample) in a charge trapping/releasing process. Double conductance peaks located in the depletion and weak inversion regions are found in our study. For the as-deposited sample, the $Si-sub/SiO_{2}$ related G—V peak with weak intensity shifts to the negative as test frequency increases. The a-Si related G—V peak with strong intensity shifts slightly with the increasing frequency. For the annealed sample, little change appears in the intensity and shift of $Si-sub/SiO_{2}$ related G—V peaks. The position of a-Si/nc-Si related peak is independent of frequency, and its intensity is weaker compared to that of the as-deposited sample. It is also found that as the size of nc-Si becomes larger, the a-Si/nc-Si related peak shifts to the depletion region due to the size effect of nc-Si. |
| Related Links | http://iopscience.iop.org/article/10.1088/0256-307X/30/7/077307/pdf |
| ISSN | 0256307X |
| e-ISSN | 17413540 |
| DOI | 10.1088/0256-307x/30/7/077307 |
| Journal | Chinese Physics Letters |
| Issue Number | 7 |
| Volume Number | 30 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2013-07-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Chinese Physics Letters Quantum Science and Technology |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy |