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Spin polarization of holes on the valence-band edge of a semiconductor quantum well
| Content Provider | Scilit |
|---|---|
| Author | Maialle, M. Z. |
| Copyright Year | 1998 |
| Description | Journal: Semiconductor Science and Technology The spin relaxation of holes with energies close to the top of the valence band of an n-type GaAs quantum well is investigated for two spin-flip mechanisms: the electron-hole exchange scattering and the acoustic-phonon-hole scattering. In thicker quantum wells we found the hole-phonon scattering to be the dominant spin-flip mechanism. In narrower wells the exchange and the hole-phonon spin-flip scatterings have similar strengths for holes with energies approaching the valence subband edge. To provide some elements to contribute to the identification of such mechanisms in experimental studies, we have commented on the dependence of these mechanisms on parameters such as temperature, quantum well width and electron density. |
| Related Links | http://iopscience.iop.org/article/10.1088/0268-1242/13/8/004/pdf |
| Ending Page | 857 |
| Page Count | 6 |
| Starting Page | 852 |
| ISSN | 02681242 |
| e-ISSN | 13616641 |
| DOI | 10.1088/0268-1242/13/8/004 |
| Journal | Semiconductor Science and Technology |
| Issue Number | 8 |
| Volume Number | 13 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1998-08-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Semiconductor Science and Technology Applied Physics Valence Band Electron Density Quantum Well Spin Polarization |
| Content Type | Text |
| Resource Type | Article |
| Subject | Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering |
