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L-band associated transitions in GaAs/AlxGa1-xAs quantum wells observed by cathodoluminescence
| Content Provider | Scilit |
|---|---|
| Author | Mitdank, R. Sveshnikova, A. Schulze, E. Oelgart, G. Reinhart, F. -K |
| Copyright Year | 1995 |
| Description | Journal: Semiconductor Science and Technology In cathodoluminescence spectra of high-quality $GaAs/Al_{x}Ga_{1-x}$As multi quantum wells (well thicknesses and barrier composition in the range 2.7 $nm |
| Related Links | http://iopscience.iop.org/article/10.1088/0268-1242/10/6/015/pdf |
| Ending Page | 840 |
| Page Count | 6 |
| Starting Page | 835 |
| ISSN | 02681242 |
| e-ISSN | 13616641 |
| DOI | 10.1088/0268-1242/10/6/015 |
| Journal | Semiconductor Science and Technology |
| Issue Number | 6 |
| Volume Number | 10 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1995-06-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Semiconductor Science and Technology Applied Physics Quantum Well Effective Mass Valence Band |
| Content Type | Text |
| Resource Type | Article |
| Subject | Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering |