NDLI: Role of Frictional Force on the Polishing Rate of Cu Chemical Mechanical Polishing

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Role of Frictional Force on the Polishing Rate of Cu Chemical Mechanical Polishing

Content Provider	Scilit
Author	Matsuo, Hisanori Ishikawa, Akira Kikkawa, Takamaro
Copyright Year	2004
Description	Journal: Japanese Journal of Applied Physics In the chemical mechanical polishing (CMP) of low-dielectric-constant (low-k) materials and Cu for ultralarge-scale integrated circuits, one of the major issues is the adhesion failure of the film caused by frictional force. An in situ quantitative measurement technique for frictional force during CMP has been developed. We have examined frictional force with respect to process parameters and slurries. A low frictional force and a high polishing rate (PR), which are desirable for a low-k/Cu CMP process, have been achieved simultaneously by optimizing slurry flow rate. The groove structures of the polishing pad did not affect frictional force at a low relative velocity. Frictional force and polishing rate increased with increasing glycine and $H_{2}O_{2}$ concentration in the slurry, and saturated at concentrations above 0.3 M and 3 vol%, respectively. A modified Preston's equation describing polishing rate as a function of frictional force instead of polishing pressure was proposed.
Related Links	http://iopscience.iop.org/article/10.1143/JJAP.43.1813/pdf
Ending Page	1819
Page Count	7
Starting Page	1813
ISSN	00214922
e-ISSN	13474065
DOI	10.1143/jjap.43.1813
Journal	Japanese Journal of Applied Physics
Issue Number	4S
Volume Number	43
Language	English
Publisher	IOP Publishing
Publisher Date	2004-04-01
Access Restriction	Open
Subject Keyword	Journal: Japanese Journal of Applied Physics Chemical Mechanical Polishing Dielectric Constant Integrated Circuit Flow Rate
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy Engineering

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