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Low Dielectric Constant Fluorinated Oxide Films Prepared by Remote Plasma Chemical Vapor Deposition
| Content Provider | Scilit |
|---|---|
| Author | Lee, Seung Min Park, Min Park, Kyu Chang Bark, Jong Tae Jang, Jin Jang Jin |
| Copyright Year | 1996 |
| Description | Journal: Japanese Journal of Applied Physics Low dielectric constant fluorinated oxide (SiOF) films were deposited using $SiF_{4}/SiH_{4}/O_{2}$ mixtures by remote plasma chemical vapor deposition (RPCVD). The refractive index and relative dielectric constant decrease with increasing $SiF_{4}/SiH_{4}$ ratio. The fluorine content in the SiOF film observed by X-ray photoelectron spectroscopy increases with $SiF_{4}/SiH_{4}$ ratio. With increase of fluorine content in the SiOF film, the peak position of the Si-O stretching mode shifts to a higher wave number and the relative dielectric constant decreases. The SiOF film, deposited with $SiF_{4}/SiH_{4}$ mixture $([SiF_{4}]/[SiH_{4}$]=40), exhibited an F content of 12 at.% and a relative dielectric constant of 3.38. |
| Related Links | http://iopscience.iop.org/article/10.1143/JJAP.35.1579/pdf |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.1143/jjap.35.1579 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 2S |
| Volume Number | 35 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1996-02-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Dielectric Constant |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
