NDLI: High-Quality InGaN Films Grown on Ga-Polarity GaN by Plasma-Assisted Molecular-Beam Epitaxy

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High-Quality InGaN Films Grown on Ga-Polarity GaN by Plasma-Assisted Molecular-Beam Epitaxy

Content Provider	Scilit
Author	Shen, Xu-Qiang Ide, Toshihide Shimizu, Mitsuaki Hara, Shiro Okumura, Hajime
Copyright Year	2000
Description	Journal: Japanese Journal of Applied Physics High-quality InGaN films were successfully grown on a Ga-polarity GaN underlayer by plasma-assisted molecular-beam epitaxy (rf-MBE) with good reproducibility. X-ray diffraction (XRD) results showed that there was no phase separation of In with the In mole fraction up to 0.36. Intense photoluminescence emissions from the InGaN films were obtained. Clear evidence was obtained for the difference in the quality between InGaN films grown on the Ga-polarity and those grown on N-polarity GaN buffer layers, in which the Ga-polarity GaN buffer is preferred. Our results provide a basis for fabricating high-quality InGaN/(Al, Ga)N heterostructures for optical and electronic device applications by rf-MBE.
Related Links	http://pdfs.semanticscholar.org/8fd5/94550d328dd1b405b907bec915cb80d82d89.pdf http://iopscience.iop.org/article/10.1143/JJAP.39.L1270/pdf
ISSN	00214922
e-ISSN	13474065
DOI	10.1143/jjap.39.l1270
Journal	Japanese Journal of Applied Physics
Issue Number	12B
Volume Number	39
Language	English
Publisher	IOP Publishing
Publisher Date	2000-12-01
Access Restriction	Open
Subject Keyword	Journal: Japanese Journal of Applied Physics Ga Polarity Gan Quality Ingan Ingan Films
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy Engineering

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