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Structural evolution of GaN nucleation layers during metal-organic chemical vapour deposition growth
| Content Provider | Scilit |
|---|---|
| Author | Degave, F. Ruterana, P. Nouet, G. Je, J. H. Kim, C. C. |
| Copyright Year | 2018 |
| Description | Low temperature nucleation of GaN on (0001) sapphire is investigated. Depositions were made for 20 s, 40 s, 60 s, 120 s and 180 s at 500°C by MOCVD. It is shown that the shortest deposition times give rise to the formation of small cubic crystallites. Subsequently, the density of nucleation islands increases, they grow in height and their shape is modified. They start to transform to wurtzite from the interface with the substrate. These results will be discussed in terms of the operating nucleation and growth mechanisms. Book Name: Microscopy of Semiconducting Materials 2001 |
| Related Links | https://api.taylorfrancis.com/content/chapters/edit/download?identifierName=doi&identifierValue=10.1201/9781351074629-59&type=chapterpdf |
| Ending Page | 284 |
| Page Count | 4 |
| Starting Page | 281 |
| DOI | 10.1201/9781351074629-59 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2018-01-18 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microscopy of Semiconducting Materials 2001 Cultural Studies Evolution Gan Nucleation Structural Shortest Give Made Sapphire Mocvd Crystallites |
| Content Type | Text |
| Resource Type | Chapter |
