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Growth and Characterization of HVPE GaN on c-sapphire with CrN Buffer Layer
| Content Provider | Scilit |
|---|---|
| Author | Woo, J. C. Hasegawa, H. Kwon, Y. S. Yao, T. Yoo, K. H. |
| Copyright Year | 2005 |
| Description | Thick GaN films are grown on various templates on c-sapphire substrates, which include molecular beam epitaxy (MBE)-grown low temperature (LT) GaN, MBE-grown LT CrN, high temperature (HT) GaN/CrN buffer layer and metal organic chemical vapour deposition (MOCVD)-grown GaN, using hydride vapour phase epitaxy (HVPE). In order to compare the quality of HVPE-grown thick GaN, samples are characterized using XRD, PL, and SEM for evaluation of crystallinity, optical property and surface morphology. The HVPE-grown thick GaN on GaN/CrN buffer have no cracks at 40 /i m film thickness and FWHM of (0002) co-scan is 497 arcsec. These results indicate the feasibility of a CrN buffer applied to free standing (FS) GaN substrates. Book Name: Compound Semiconductors 2004 |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2006-0-18739-X&isbn=9780429177101&doi=10.1201/9781482269222-90&format=pdf |
| Ending Page | 404 |
| Page Count | 4 |
| Starting Page | 401 |
| DOI | 10.1201/9781482269222-90 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2005-04-01 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Compound Semiconductors 2004 Crystallography |
| Content Type | Text |
| Resource Type | Chapter |
