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Light-Emitting Diodes Based on p-GaN/i-ZnO/n-ZnO Heterojunctions
| Content Provider | Scilit |
|---|---|
| Author | Liu, Yichun Tong, Yanhong |
| Copyright Year | 2012 |
| Description | ZnO-based p-n homojunction light emitting diodes (LEDs) have gained great progress in recent years [1–5]. However, their commercial applications face a big challenge due to the lack of a growth technique for realizing reproducible, stable, and high-quality p-type ZnO [6]. Although N is known to be the most likely genuine p-type dopant based on electronic structure and atomic size considerations, recent reports demonstrate that N cannot lead to p-type conductivity in ZnO [7,8]. An alternative approach is to fabricate heterostructured ZnO-based devices using other p-type materials to substitute the p-ZnO. Book Name: Handbook of Zinc Oxide and Related Materials |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2010-0-41928-4&isbn=9780429062582&doi=10.1201/b13071-5&format=pdf |
| Ending Page | 218 |
| Page Count | 42 |
| Starting Page | 177 |
| DOI | 10.1201/b13071-5 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2012-09-26 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Handbook of Zinc Oxide and Related Materials Public, Environmental and Occupational Health Zno Based Light Emitting Zno Heterojunctions Emitting Diodes Structure |
| Content Type | Text |
| Resource Type | Chapter |
