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A comparative study of the structural properties of InGaN/GaN quantum wells determined by X-ray diffraction, high-angle annular dark-field imaging and energy-filtered TEM
| Content Provider | Scilit |
|---|---|
| Author | Barnard, Jonathan Vickers, M. E. Kappers, M. J. Thrush, E. J. Humphreys, C. J. |
| Copyright Year | 2018 |
| Description | Book Name: Microscopy of Semiconducting Materials 2003 |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2017-0-66874-9&isbn=9781351074636&doi=10.1201/9781351074636-13&format=pdf |
| Ending Page | 60 |
| Page Count | 4 |
| Starting Page | 57 |
| DOI | 10.1201/9781351074636-13 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2018-01-10 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microscopy of Semiconducting Materials 2003 Atmospheric Sciences |
| Content Type | Text |
| Resource Type | Chapter |