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Nano-clustering anomalies in InGaN/GaN multiple quantum well structures
| Content Provider | Scilit |
|---|---|
| Author | O'neill, J. P. Ross, I. M. Cullis, A. G. Wang, T. Parbrook, Peter |
| Copyright Year | 2018 |
| Description | In this study the morphology and composttion of InxGa $1n_{x}$N/GaN multiple quantum well structures and their sensitivity to electron beam damage is examined. Characterization was performed using high-resolution transmission electron microscopy, energy dispersive X-ray analysis and scanning transmission electron microscopy. Exposure to relatively low incident beam illumination, corresponding to current densities at the specimen of $~100A/cm^{2}$ cumulated in a significant redistribution of indium within the multiple quantum wells. The findings highlight the need for caution when interpreting analytical data obtained from InGaN/GaN multiple quantum wells studied in the transmission electron microscope. Book Name: Microscopy of Semiconducting Materials 2003 |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2017-0-66874-9&isbn=9781351074636&doi=10.1201/9781351074636-69&format=pdf |
| Ending Page | 300 |
| Page Count | 4 |
| Starting Page | 297 |
| DOI | 10.1201/9781351074636-69 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2018-01-10 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microscopy of Semiconducting Materials 2003 Microscopic Research Structures Multiple Quantum Wells Ingan/gan Multiple Quantum Well |
| Content Type | Text |
| Resource Type | Chapter |
