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Tetracene Based OTFT with Nd2O3-dielectric Layer
| Content Provider | Scilit |
|---|---|
| Author | Saikia, D. Sarma, R. Saikia, P. K. |
| Copyright Year | 2010 |
| Description | Tetracene thin film transistors with rare earth oxide $(Nd_{2}O_{3}$) as gate dielectric is reported in this work. Rare earth oxide with high dielectric constant and low leakage current improve the performance of the organic thin film transistors (OTFTs). The fabricated tetracene OTFTs have shown good output characteristics with mobility $0.93x10^{-4}$ $cm^{2}$/V.s, ON-OFF ratio $3.3x10^{2}$, sub-threshold swing 0.06 V/decade and hole concentration $8.74x10^{17}$ $cm^{-3}$. Keywords: Organic thin film transistors; Tetracene; Rare earth oxide; Trap density. © 2010 JSR Publications. ISSN: 2070-0237 (Print); 2070-0245 (Online). All rights reserved. DOI: 10.3329/jsr.v2i2.4094 J. Sci. Res. 2 (2), 214-220 (2010) |
| Ending Page | 220 |
| Page Count | 7 |
| Starting Page | 214 |
| ISSN | 20700237 |
| e-ISSN | 20700245 |
| DOI | 10.3329/jsr.v2i2.4094 |
| Alternate Webpage(s) | https://www.banglajol.info/index.php/JSR/article/download/4094/3905 |
| Journal | Journal of Scientific Research |
| Issue Number | 2 |
| Volume Number | 2 |
| Language | English |
| Publisher | Bangladesh Academy of Sciences |
| Publisher Date | 2010-04-26 |
| Access Restriction | Open |
| Subject Keyword | Agricultural Engineering Thin Film Transistors Rare Earth Oxide |
| Content Type | Text |
| Resource Type | Article |
