NDLI: Solution-processable poly(N-vinylcarbazole)-covalently grafted MoS<sub>2</sub> nanosheets for nonvolatile rewritable memory devices

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Nanoscale Vol - 9 Issue - 6

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Nanoscale Vol - 9 Issue - 2

Solution-processable poly(N-vinylcarbazole)-covalently grafted MoS₂ nanosheets for nonvolatile rewritable memory devices

Content Provider	Royal Society of Chemistry (RSC)
Author	Zhang, Bin Fan, Fei Chen, Yu Cao, Yaming
Copyright Year	2017
Abstract	A novel nonvolatile rewritable memory device based on the soluble poly(N-vinylcarbazole)-chemically modified MoS2 nanosheets (MoS2-PVK) was fabricated with the configuration of Au/MoS2-PVK/ITO. This is the first example of polymer covalently modified MoS2 nanosheet-based memory devices. As expected, this device exhibited a typical storage performance of nonvolatile rewritable memory, with a turn-on voltage of −1.54 V and an ON/OFF current ratio of 4 × 102. After annealing at 80 °C for 1 h under a nitrogen atmosphere, a high ON/OFF current ratio (up to 3 × 104) and a lower turn-on voltage (−1.31 V), which are among the best reported for MoS2-based polymer/organic memory devices, were achieved due to enhanced crystallization of PVK, which induced a more efficient intramolecular charge transfer effect between PVK and MoS2 during the annealing process. The effect of film thickness on the current–voltage characteristics of the MoS2-PVK-based devices and the memory performance of the MoS2/PVK blends-based devices have also been explored.
Starting Page	2449
Ending Page	2456
Page Count	8
File Format	HTM / HTML PDF
ISSN	20403364
Volume Number	9
Issue Number	7
Journal	Nanoscale
DOI	10.1039/c6nr09241a
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	PVK N-Vinylcarbazole Polymer Nitrogen Nucleic acid thermodynamics
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology

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