NDLI: Excitation wavelength dependent fluorescence of graphene oxide controlled by strain

Content Provider	Royal Society of Chemistry (RSC)
Author	Huang, Fuqiang Wang, Chao Ding, Weiqiang Chen, Gang Cushing, Scott K. Wu, Nianqiang Yang, Feng
Copyright Year	2017
Abstract	Unlike conventional fluorophores, the fluorescence emission of graphene oxide (GO) sheets can shift hundreds of nanometers as the excitation wavelength increases. The excitation wavelength dependent fluorescence is referred to as a giant red-edge effect and originates in a local reorganization potential slowing down the solvation dynamics of the excited state to the same time scale as the fluorescence lifetime. The present work has discovered that out-of-plane strain in the graphene oxide sheet leads to the intra-layer interaction necessary to slow down the solvation time scale. The oxygen percentage, dopant percentage, disorder, and strain are correlated with the presence and extent of the red-edge effect in oxygen, boron, nitrogen, and fluorine doped graphene oxide. Of these commonly cited possibilities, only out-of-plane strain is directly correlated to the red-edge effect. Furthermore, it is shown that the extent of the red-edge effect, or how far the emission wavelength can shift with increasing excitation wavelength, can be tuned by the electronegativity of the dopant. The present work interprets why the giant red-edge effect is present in some GO sheets but not in other GO sheets.
Starting Page	2240
Ending Page	2245
Page Count	6
File Format	HTM / HTML PDF
ISSN	20403364
Volume Number	9
Issue Number	6
Journal	Nanoscale
DOI	10.1039/c6nr08286f
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	Red edge Oxygen Boron Solvation Graphene Fluorine Fluorescence Dopant Electronegativity Nitrogen Wavelength
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Band gap opening of graphene by doping small boron nitride domains

Chemical gating of epitaxial graphene through ultrathin oxide layers

Wavelength-selective fluorescence in ion channels formed by gramicidin A in membranes

Oxygen molecule dissociation on carbon nanostructures with different types of nitrogen doping

Layer speciation and electronic structure investigation of freestanding hexagonal boron nitride nanosheets

Vertical junction photodetectors based on reduced graphene oxide/silicon Schottky diodes

Effect of N/B doping on the electronic and field emission properties for carbon nanotubes, carbon nanocones, and graphene nanoribbons

Equibiaxial Strained Oxygen Adsorption on Pristine Graphene, Nitrogen/Boron Doped Graphene, and Defected Graphene

Influence of edge imperfections on the transport behavior of graphene nanomeshes

Excitation wavelength dependent fluorescence of graphene oxide controlled by strain

Similar Documents

Band gap opening of graphene by doping small boron nitride domains

Chemical gating of epitaxial graphene through ultrathin oxide layers

Wavelength-selective fluorescence in ion channels formed by gramicidin A in membranes

Oxygen molecule dissociation on carbon nanostructures with different types of nitrogen doping

Layer speciation and electronic structure investigation of freestanding hexagonal boron nitride nanosheets

Vertical junction photodetectors based on reduced graphene oxide/silicon Schottky diodes

Effect of N/B doping on the electronic and field emission properties for carbon nanotubes, carbon nanocones, and graphene nanoribbons

Equibiaxial Strained Oxygen Adsorption on Pristine Graphene, Nitrogen/Boron Doped Graphene, and Defected Graphene

Influence of edge imperfections on the transport behavior of graphene nanomeshes

Excitation wavelength dependent fluorescence of graphene oxide controlled by strain