NDLI: Partial hydrogenation induced interaction in a graphene–SiO<sub>2</sub> interface: irreversible modulation of device characteristics

Content Provider	Royal Society of Chemistry (RSC)
Author	Mizuta, Hiroshi Iwasaki, Takuya Muruganathan, Manoharan Schmidt, Marek E.
Copyright Year	2017
Abstract	The transformation of systematic vacuum and hydrogen annealing effects in graphene devices on the SiO2 surface is reported based on experimental and van der Waals interaction corrected density functional theory (DFT) simulation results. Vacuum annealing removes p-type dopants and reduces charged impurity scattering in graphene. Moreover, it induces n-type doping into graphene, leading to the improvement of the electron mobility and conductivity in the electron transport regime, which are reversed by exposing to atmospheric environment. On the other hand, annealing in hydrogen/argon gas results in smaller n-type doping along with a decrease in the overall conductivity and carrier mobility. This degradation of the conductivity is irreversible even the graphene devices are exposed to ambience. This was clarified by DFT simulations: initially, silicon dangling bonds were partially terminated by hydrogen, subsequently, the remaining dangling bonds became active and the distance between the graphene and SiO2 surface decreased. Moreover, both annealing methods affect the graphene channel including the vicinity of the metal contacts, which plays an important role in asymmetric carrier transport.
Starting Page	1662
Ending Page	1669
Page Count	8
File Format	HTM / HTML PDF
ISSN	20403364
Volume Number	9
Issue Number	4
Journal	Nanoscale
DOI	10.1039/c6nr08117g
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	Extrinsic semiconductor Hydrogen Graphene Dopant Electron mobility Density functional theory Argon Van der Waals force Nucleic acid thermodynamics
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology

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