NDLI: Charge trap memory based on few-layer black phosphorus

Content Provider	Royal Society of Chemistry (RSC)
Author	Luo, Wengang Feng, Qi Yan, Faguang Wang, Kaiyou
Copyright Year	2016
Abstract	Atomically thin layered two-dimensional materials, including transition-metal dichalcogenide (TMDC) and black phosphorus (BP), have been receiving much attention, because of their promising physical properties and potential applications in flexible and transparent electronic devices. Here, for the first time we show nonvolatile charge-trap memory devices, based on field-effect transistors with large hysteresis, consisting of a few-layer black phosphorus channel and a three dimensional (3D) Al2O3/HfO2/Al2O3 charge-trap gate stack. An unprecedented memory window exceeding 12 V is observed, due to the extraordinary trapping ability of the high-k HfO2. The device shows a high endurance of over 120 cycles and a stable retention of ∼30% charge loss after 10 years, even lower than the reported MoS2 flash memory. The high program/erase current ratio, large memory window, stable retention and high on/off current ratio, provide a promising route towards flexible and transparent memory devices utilising atomically thin two-dimensional materials. The combination of 2D materials with traditional high-k charge-trap gate stacks opens up an exciting field of nonvolatile memory devices.
Starting Page	2686
Ending Page	2692
Page Count	7
File Format	HTM / HTML PDF
ISSN	20403364
Volume Number	8
Issue Number	5
Journal	Nanoscale
DOI	10.1039/c5nr08065g
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	Computer data storage Chalcogenide Hafnium(IV) oxide Flash memory Allotropes of phosphorus Hysteresis Three-dimensional space
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology

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