NDLI: Core–shell structured photovoltaic devices based on PbS quantum dots and silicon nanopillar arrays

Content Provider	Royal Society of Chemistry (RSC)
Author	Xu, Yonglan Song, Tao Zhang, Fute Sun, Baoquan Lee, Shuittong Lei, Xiaofei
Copyright Year	2012
Abstract	We fabricated three-dimensional silicon nanopillar array (SiNP)-based photovoltaic (PV) devices using PbS quantum dots (QDs) as the hole-transporting layers. The core–shell structured device, which is based on high aspect ratio SiNPs standing on roughed silicon substrates, displays a higher PV performance with a power conversion efficiency (PCE) of 6.53% compared with that of the planar device (2.11%). The enhanced PCE is ascribed to the increased light absorption and the improved charge carrier collections in SiNP-modified silicon surfaces. We also show that, for the core–shell structured device, the thickness of the shell layer plays a critical role in enhancing the PV performance and around five monolayers of QDs are preferred for efficient hole-transporting. Wafer-scale PV devices with a radial PbS/SiNP heterojunction can be fabricated by solution phase techniques at low temperatures, suggesting a facile route to fabricate unique three-dimensional nanostructured devices.
Starting Page	1336
Ending Page	1343
Page Count	8
File Format	HTM / HTML PDF
ISSN	20403364
Volume Number	4
Issue Number	4
Journal	Nanoscale
DOI	10.1039/c2nr11634k
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	Solar cell Nanopillar Critical Role Charge carrier modified Quantum tunnelling Heterojunction
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology

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