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Lab on a Chip Vol - 9 Issue - 9

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Localized heating on silicon field effect transistors: Device fabrication and temperature measurements in fluid

Content Provider	Royal Society of Chemistry (RSC)
Author	Elibol, Oguz H. Bergstrom, Donald E. Alam, Muhammad A. Reddy, Bobby Jr. Dorvel, Brian Butler, Felice Bashir, Rashid Ahsan, Zahab S. Nair, Pradeep R.
Copyright Year	2009
Abstract	We demonstrate electrically addressable localized heating in fluid at the dielectric surface of silicon-on-insulator field-effect transistors via radio-frequency Joule heating of mobile ions in the Debye layer. Measurement of fluid temperatures in close vicinity to surfaces poses a challenge due to the localized nature of the temperature profile. To address this, we developed a localized thermometry technique based on the fluorescence decay rate of covalently attached fluorophores to extract the temperature within 2 nm of any oxide surface. We demonstrate precise spatial control of voltage dependent temperature profiles on the transistor surfaces. Our results introduce a new dimension to present sensing systems by enabling dual purpose silicon transistor-heaters that serve both as field effect sensors as well as temperature controllers that could perform localized bio-chemical reactions in Lab on Chip applications.
Starting Page	2789
Ending Page	2795
Page Count	7
File Format	HTM / HTML PDF
ISSN	14730197
Volume Number	9
Issue Number	19
Journal	Lab on a Chip
DOI	10.1039/b906048k
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	Silicon on insulator Temperature measurement Joule heating Fluorescence Transistor Dielectric Joule
Content Type	Text
Resource Type	Article
Subject	Chemistry Nanoscience and Nanotechnology Biochemistry Bioengineering Biomedical Engineering

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