NDLI: Photoelectrochemical studies with n-type Cdo

Content Provider	Royal Society of Chemistry (RSC)
Author	Harriman, Anthony
Copyright Year	1983
Abstract	CdO is an inherent n-type semiconductor with a band-gap of ca. 2.3 eV and a flat-band potential located at –0.25 V vs SCE in 0.1 mol dm–3 NaOH solution. Electrodes fabricated by compressing CdO powder showed an exchange current density of 5 × 10–8 A cm–2 for O2 liberation in 0.1 mol dm–3 NaOH and this was increased to 9 × 10–6 A cm–2 by depositing small amounts of RuO2 onto the CdO surface. Irradiation of CdO powder suspended in alkaline solution resulted in O2 formation only when an electron acceptor, such as ferricyanide, was present in solution. The presence of RuO2 deposits reduced the yield of O2.
Starting Page	2875
Ending Page	2877
Page Count	3
File Format	PDF
ISSN	03009599
Volume Number	79
Issue Number	12
Journal	Journal of the Chemical Society, Faraday Transactions 1
DOI	10.1039/F19837902875
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	Extrinsic semiconductor Oxygen SCE Electronvolt Irradiation Ferricyanide Exchange current density Electron acceptor
Content Type	Text
Resource Type	Article
Subject	Chemistry

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Photoelectrochemical studies with n-type Cdo