NDLI: Controllable III–V nanowire growth <i>via</i> catalyst epitaxy

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Journal of Materials Chemistry C Vol - 5 Issue - 9

Journal of Materials Chemistry C Vol - 5 Issue - 8

Journal of Materials Chemistry C Vol - 5 Issue - 7

Journal of Materials Chemistry C Vol - 5 Issue - 6

Journal of Materials Chemistry C Vol - 5 Issue - 5

Journal of Materials Chemistry C Vol - 5 Issue - 4

Journal of Materials Chemistry C Vol - 5 Issue - 3

Journal of Materials Chemistry C Vol - 5 Issue - 2

Journal of Materials Chemistry C Vol -4

Journal of Materials Chemistry C Vol -3

Journal of Materials Chemistry C Vol -2

Journal of Materials Chemistry C Vol -1

Controllable III–V nanowire growth via catalyst epitaxy

Content Provider	Royal Society of Chemistry (RSC)
Author	Ho, Johnny C. Wang, Zhou Han, Ning Yang, Zai-xing Hung, Tak Fu Chen, Yunfa Wang, Ying Li, Dapan Yip, SenPo Wang, Fengyun
Copyright Year	2017
Abstract	Controllable synthesis of III–V compound semiconductor nanowires (NWs) with high crystallinity and uniformity is essential for their large-scale practical use in various technological applications, especially for those which are grown on non-crystalline substrates. In this study, the catalytic effect is investigated thoroughly in the growth of various III–V NWs in solid-source chemical vapor deposition, including Pd, Ag and Ni catalyzed GaAs NWs and Au catalyzed InGaAs and GaSb NWs. It is found that small diameter catalyst seeds lead to faster NW growth with better crystal quality, while large seeds result in slower NW growth with kinked morphology and twinning defects. Importantly, these small catalyst nanoparticles are observed to have higher solubility of the group III precursors due to the Gibbs–Thomson effect, which not only enables effective III precursor diffusion for a faster growth rate, but also yields epitaxial growth of NWs from the catalyst seeds accounting for the low activation energy and better crystallinity. All these results explicitly demonstrate the effectiveness of this catalyst solubility and epitaxy engineering for controlled III–V NW growth and indicate the potency for the reliable production of high-performance NWs for next-generation electronics.
Starting Page	4393
Ending Page	4399
Page Count	7
File Format	HTM / HTML PDF
ISSN	20507526
Volume Number	5
Issue Number	18
Journal	Journal of Materials Chemistry C
DOI	10.1039/c7tc00900c
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	Thomson List of semiconductor materials Chemical vapor deposition Gallium arsenide Indium gallium arsenide Diffusion Activation energy
Content Type	Text
Resource Type	Article
Subject	Chemistry Materials Chemistry

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