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Journal of Materials Chemistry C Vol - 5 Issue - 3

Journal of Materials Chemistry C Vol - 5 Issue - 2

Journal of Materials Chemistry C Vol -4

Journal of Materials Chemistry C Vol -3

Journal of Materials Chemistry C Vol -2

Journal of Materials Chemistry C Vol -1

Gate tunable photovoltaic effect in MoS₂ vertical p–n homostructures

Content Provider	Royal Society of Chemistry (RSC)
Author	Frisenda, Riccardo Antolin, Elisa Lin, Der-Yuh Molina-Mendoza, Aday J. Castellanos-Gomez, Andres Svatek, Simon A. Agraït, Nicolás Ko, Tsung-Shine Lara, David Perez de Reuter, Christoph Muñoz, Manuel
Copyright Year	2017
Abstract	p–n junctions based on vertically stacked single or few-layer transition metal dichalcogenides (TMDCs) have attracted substantial scientific interest. Due to the propensity of TMDCs to show exclusively one type of conductivity, n- or p-type, heterojunctions of different materials are typically fabricated to produce diode-like current rectification and photovoltaic response. Recently, artificial, stable and substitutional doping of MoS2 into n- and p-type materials has been demonstrated. MoS2 is an interesting material for use in optoelectronic applications due to its potential of low-cost production in large quantities, strong light–matter interactions and chemical stability. Here we report the characterization of the optoelectronic properties of vertical homojunctions made by stacking few-layer flakes of MoS2:Fe (n-type) and MoS2:Nb (p-type). The junctions exhibit a peak external quantum efficiency of 4.7% and a maximum open circuit voltage of 0.51 V; they are stable in air; and their rectification characteristics and photovoltaic response are in excellent agreement with the Shockley diode model. The gate-tunability of the maximum output power, the ideality factor and the shunt resistance indicate that the dark current is dominated by trap-assisted recombination and that the photocurrent collection depends strongly on the spatial extent of the space charge region. We demonstrate a response time faster than 80 ms and highlight the potential to integrate such devices into quasi-transparent and flexible optoelectronics.
Starting Page	854
Ending Page	861
Page Count	8
File Format	HTM / HTML PDF
ISSN	20507526
Volume Number	5
Issue Number	4
Journal	Journal of Materials Chemistry C
DOI	10.1039/c6tc04699a
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	Shockley Transition metal Extrinsic semiconductor Solar cell Dopant Optoelectronics Quantum tunnelling Diode Photoreceptor cell Carrier generation and recombination Photocurrent Space charge
Content Type	Text
Resource Type	Article
Subject	Chemistry Materials Chemistry

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