NDLI: In-plane and out-of-plane mass transport during metal-assisted chemical etching of GaAs

Content Provider	Royal Society of Chemistry (RSC)
Author	Choi, Keorock Oh, Jungwoo Oh, Ilwhan Song, Yunwon Ki, Bugeun
Copyright Year	2014
Abstract	We have demonstrated the dependence of the metal-assisted chemical etching of GaAs on catalyst thickness. For ultra-thin (3–10 nm) Au catalysts, we found that the etch rate was significantly enhanced, an unexpected phenomenon in light of the conventional mechanism. Numerous pinholes in the metal catalyst are postulated to enable out-of-plane mass transport of reactants and products across the catalyst-covered GaAs. When this process is dominant, the GaAs etch rate is facilitated and an anisotropic profile is formed. With thicker (>15 nm) Au catalysts, the conventionally known in-plane mass transport becomes dominant and lowers the etch rate with an isotropic profile. To our knowledge, this is the first report that experimentally verifies the vertical mass transport during metal-assisted chemical etching of semiconductors. Metal-assisted chemical etching of GaAs with controlled metal catalyst thickness suggests that this technique is more attractive and useful for a wide range of practical applications.
Starting Page	11017
Ending Page	11021
Page Count	5
File Format	HTM / HTML PDF
ISSN	20507488
Volume Number	2
Issue Number	29
Journal	Journal of Materials Chemistry A
DOI	10.1039/c4ta02189d
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	Correlation and dependence Chemical milling Gallium arsenide Anisotropy Isotropy
Content Type	Text
Resource Type	Article
Subject	Chemistry Renewable Energy, Sustainability and the Environment Materials Science

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Thermally driven metal-assisted chemical etching of GaAs with in-position and out-of-position catalyst

In-plane and out-of-plane mass transport during metal-assisted chemical etching of GaAs

Remarkable stability of unmodified GaAs photocathodes during hydrogen evolution in acidic electrolyte

Broadband and wide angle antireflection of sub-20 nm GaAs nanograss

Scalable approach to multi-dimensional bulk Si anodes via metal-assisted chemical etching

The etching of GaAs, AlGaAs and InGaAs in different chemicals in p-HEMT mesa layers

High-Efficiency, Thin-Film GaAs Solar Cells

Conductive polymer/GaAs hybrid heterojunction photovoltaic devices

Etching anisotropy mechanisms lead to morphology-controlled silicon nanoporous structures by metal assisted chemical etching

In-plane and out-of-plane mass transport during metal-assisted chemical etching of GaAs

Similar Documents

Thermally driven metal-assisted chemical etching of GaAs with in-position and out-of-position catalyst

In-plane and out-of-plane mass transport during metal-assisted chemical etching of GaAs

Remarkable stability of unmodified GaAs photocathodes during hydrogen evolution in acidic electrolyte

Broadband and wide angle antireflection of sub-20 nm GaAs nanograss

Scalable approach to multi-dimensional bulk Si anodes via metal-assisted chemical etching

The etching of GaAs, AlGaAs and InGaAs in different chemicals in p-HEMT mesa layers

High-Efficiency, Thin-Film GaAs Solar Cells

Conductive polymer/GaAs hybrid heterojunction photovoltaic devices

Etching anisotropy mechanisms lead to morphology-controlled silicon nanoporous structures by metal assisted chemical etching

In-plane and out-of-plane mass transport during metal-assisted chemical etching of GaAs