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Gallium arsenide phosphide grown by close-spaced vapor transport from mixed powder sources for low-cost III–V photovoltaic and photoelectrochemical devices

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Journal of Materials Chemistry A Vol - 4 Issue - 7

Journal of Materials Chemistry A Vol - 4 Issue - 6

Journal of Materials Chemistry A Vol - 4 Issue - 5

Journal of Materials Chemistry A Vol -3

Journal of Materials Chemistry A Vol -2

Journal of Materials Chemistry A Vol -1

Gallium arsenide phosphide grown by close-spaced vapor transport from mixed powder sources for low-cost III–V photovoltaic and photoelectrochemical devices

Content Provider	Royal Society of Chemistry (RSC)
Author	Aloni, Shaul Boettcher, Shannon W. Ritenour, Andrew J. Boucher, Jason W. Greenaway, Ann L. Davis, Allison L.
Copyright Year	2016
Abstract	We report the heteroepitaxial growth of variable composition n-GaAs1−xPx directly on GaAs substrates via close-spaced vapor transport using mixed GaAs–GaP powder sources. GaAs1−xPx films showed an average 10% reduction in atomic concentration of phosphorous from the source material, and ten GaAs0.7P0.3 films were grown with reproducible composition from a single source pellet. Non-aqueous photoelectrochemical measurements were used to assess electronic quality, with the best short-circuit photocurrent of 6.7 mA cm−2 and open-circuit photovoltage of 0.915 V for n-GaAs0.7P0.3 with a carrier concentration of 2 × 1017 cm−3. The best Hall electron mobility for this composition was 1570 cm2 V−1 s−1. Cross-sectional transmission electron microscopy of GaAs0.7P0.3 shows single-crystal structure with few defects. We conclude that CSVT is a promising route to the growth of ternary III–V materials like GaAs1−xPx for low-cost high-efficiency tandem photoelectrochemical or photovoltaic devices.
Starting Page	2909
Ending Page	2918
Page Count	10
File Format	HTM / HTML PDF
ISSN	20507488
Volume Number	4
Issue Number	8
Journal	Journal of Materials Chemistry A
DOI	10.1039/c5ta06900a
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	Gallium arsenide Photoelectrochemical cell Photocurrent Electron mobility Transmission electron microscopy Solar cell
Content Type	Text
Resource Type	Article
Subject	Chemistry Renewable Energy, Sustainability and the Environment Materials Science

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Gallium arsenide phosphide grown by close-spaced vapor transport from mixed powder sources for low-cost III–V photovoltaic and photoelectrochemical devices

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