NDLI: Tuning of resistive memory switching in electropolymerized metallopolymeric films

Content Provider	Royal Society of Chemistry (RSC)
Author	Cui, Bin-Bin Yu, Gui Zhan, Chuanlang Mao, Zupan Chen, Yuxia Zhong, Yu-Wu Yao, Jiannian
Copyright Year	2015
Abstract	A diruthenium complex capped with two triphenylamine units was polymerized by electrochemical oxidation to afford metallopolymeric films with alternating diruthenium and tetraphenylbenzidine structures. The obtained thin films feature rich redox processes associated with the reduction of the bridging ligands (tetra(pyrid-2-yl)pyrazine) and the oxidation of the tetraphenylbenzidine and diruthenium segments. The sandwiched ITO/polymer film/Al electrical devices show excellent resistive memory switching with a low operational voltage, large ON/OFF current ratio (100–1000), good stability (500 cycles tested), and long retention time. In stark contrast, devices with polymeric films of a related monoruthenium complex show poor memory performance. The mechanism of the field-induced conductivity of the diruthenium polymer film is rationalized by the formation of a charge transfer state, as supported by DFT calculations.
Starting Page	1308
Ending Page	1315
Page Count	8
File Format	HTM / HTML PDF
ISSN	20416520
Volume Number	6
Issue Number	2
Journal	Chemical Science
DOI	10.1039/c4sc03345k
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Subscribed
Subject Keyword	Computer memory Pyrazine Electrochemistry Redox Polymer Triphenylamine
Content Type	Text
Resource Type	Article
Subject	Chemistry

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Tuning of resistive memory switching in electropolymerized metallopolymeric films