NDLI: Electrodeposition as a superior route to a thin film molecular semiconductor

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Back cover

Chemical Science Vol -1

Electrodeposition as a superior route to a thin film molecular semiconductor

Content Provider	Royal Society of Chemistry (RSC)
Author	Robertson, Neil Dalgleish, Simon Matsushita, Michio M. Awaga, Kunio Yoshikawa, Hirofumi
Copyright Year	2011
Abstract	Electrooxidation to form neutral films of a homoleptic nickel dithiolene [Ni(b-3ted)2] (1) from an air-stable TBA salt is described [b-3ted = bis(3-thienyl)-1,2-ethylenedithiolene; TBA = tetrabutylammonium]. Films grown by potentiostatic electrodeposition directly onto interdigitated electrode arrays show improved conductivity compared to those formed by solution methods. The grown films are free from residual electrolyte doping, and this technique is shown to yield robust films of reproducible electronic performance. The conductivity of films formed by electrodeposition show gate dependence when grown directly onto field effect transistor substrates. Thin-film X-ray diffraction confirms the electrodeposited films to be of the same polymorph as films and single crystals formed by solution methods. Scanning electron microscopy shows the electrodeposited films to have larger, more connected polycrystalline regions, as well as improved contact with the electrodes.
Starting Page	316
Ending Page	320
Page Count	5
File Format	HTM / HTML PDF
ISSN	20416520
Volume Number	2
Issue Number	2
Journal	Chemical Science
DOI	10.1039/c0sc00446d
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	Electrode Metal dithiolene complex Tetra-n-butylammonium bromide Field-effect transistor Crystallite Electroplating Scanning electron microscope X-ray crystallography Electrolyte Homoleptic Dopant Nickel Shapeshifting Electrophoretic deposition
Content Type	Text
Resource Type	Article
Subject	Chemistry

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