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CrystEngComm Vol - 19 Issue - 4

CrystEngComm Vol - 19 Issue - 3

CrystEngComm Vol - 19 Issue - 2

Synthesis and investigations of In₂S₃:Ho³⁺ quantum dots on doping induced changes

Content Provider	Royal Society of Chemistry (RSC)
Author	Zhao, Qi Li, Zhifang Chuai, Mingyan Yang, Tianye Zhang, Mingzhe Yu, Hai
Copyright Year	2017
Abstract	Diluted magnetic semiconductor (DMS) quantum dots have been investigated extensively because of their potential applications in spintronic devices that combine the charge and spin properties of electrons in a material. Herein, the In2S3:Ho3+ quantum dots (3–5 nm) with different doping concentrations have been synthesized using the facility built by us and the corresponding growth mechanism is proposed and discussed in detail. We investigated the effect of different Ho3+ content on the optical and magnetic properties. The absorption and emission spectra exhibit a strong quantum size confinement effect and a large Stokes shift. The band gap energy can be tuned by doping concentration varying from 3.19 to 3.62 eV. The emission processes are assigned to the excitonic recombination and near-doping/near-defect excitonic luminescence, respectively. Excess Ho3+ content reduces the intensity of photoluminescence as a result of concentration quenching. Room temperature ferromagnetism is observed from VSM measurement. The change of saturation magnetizations with various Ho3+ doping concentrations is explained and discussed based on BMP theory. In addition, the band gap distribution and the chemical bonding mechanism are clearly illustrated using VASP first-principles calculations. This study provides experimental and theoretical guidance for designing and synthesizing unique spintronic materials, which can promote the development of spintronic applications.
Starting Page	853
Ending Page	859
Page Count	7
File Format	HTM / HTML PDF
ISSN	14668033
Volume Number	19
Issue Number	5
Journal	CrystEngComm
DOI	10.1039/c6ce02304e
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	VASP Semiconductor Stokes shift Carrier generation and recombination Luminescence Photoluminescence Electronvolt VSM Stokes Bone morphogenetic protein Dopant Ferromagnetism Band gap Room temperature Spintronics
Content Type	Text
Resource Type	Article
Subject	Chemistry Condensed Matter Physics Materials Science

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