NDLI: Low-damage direct patterning of silicon oxide mask by mechanical processing

Content Provider	PubMed Central
Author	Miyake, Shojiro Yamazaki, Shohei
Copyright Year	2014
Abstract	To realize the nanofabrication of silicon surfaces using atomic force microscopy (AFM), we investigated the etching of mechanically processed oxide masks using potassium hydroxide (KOH) solution. The dependence of the KOH solution etching rate on the load and scanning density of the mechanical pre-processing was evaluated. Particular load ranges were found to increase the etching rate, and the silicon etching rate also increased with removal of the natural oxide layer by diamond tip sliding. In contrast, the local oxide pattern formed (due to mechanochemical reaction of the silicon) by tip sliding at higher load was found to have higher etching resistance than that of unprocessed areas. The profile changes caused by the etching of the mechanically pre-processed areas with the KOH solution were also investigated. First, protuberances were processed by diamond tip sliding at lower and higher stresses than that of the shearing strength. Mechanical processing at low load and scanning density to remove the natural oxide layer was then performed. The KOH solution selectively etched the low load and scanning density processed area first and then etched the unprocessed silicon area. In contrast, the protuberances pre-processed at higher load were hardly etched. The etching resistance of plastic deformed layers was decreased, and their etching rate was increased because of surface damage induced by the pre-processing. These results show that etching depth can be controlled by controlling the etching time through natural oxide layer removal and mechanochemical oxide layer formation. These oxide layer removal and formation processes can be exploited to realize low-damage mask patterns.
Related Links	http://dx.doi.org/10.1186/1556-276x-9-269
Ending Page	269
Page Count	1
Starting Page	269
File Format	PDF
ISSN	1556276X
e-ISSN	1556276X
Journal	Nanoscale Research Letters
Issue Number	1
Volume Number	9
Language	English
Publisher	Springer
Publisher Date	2014-01-01
Access Restriction	Open
Rights Holder	Springer
Subject Keyword	Materials Science(all) Condensed Matter Physics Research in Higher Education
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Condensed Matter Physics

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