NDLI: Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer

Content Provider	PubMed Central
Author	Utrilla, Antonio D. Ulloa, Jose M. Guzman, Alvaro Hierro, Adrian
Copyright Year	2014
Abstract	An extensive study on molecular beam epitaxy growth conditions of quaternary GaAsSbN as a capping layer (CL) for InAs/GaAs quantum dots (QD) was carried out. In particular, CL thickness, growth temperature, and growth rate were optimized. Problems related to the simultaneous presence of Sb and N, responsible for a significant degradation of photoluminescence (PL), are thereby solved allowing the achievement of room-temperature (RT) emission. A particularly strong improvement on the PL is obtained when the growth rate of the CL is increased. This is likely due to an improvement in the structural quality of the quaternary alloy that resulted from reduced strain and composition inhomogeneities. Nevertheless, a significant reduction of Sb and N incorporation was found when the growth rate was increased. Indeed, the incorporation of N is intrinsically limited to a maximum value of approximately 1.6% when the growth rate is at 2.0 ML s−1. Therefore, achieving RT emission and extending it somewhat beyond 1.3 μm were possible by means of a compromise among the growth conditions. This opens the possibility of exploiting the versatility on band structure engineering offered by this QD-CL structure in devices working at RT.
Related Links	http://dx.doi.org/10.1186/1556-276x-9-36
Ending Page	36
Page Count	1
Starting Page	36
File Format	PDF
ISSN	1556276X
e-ISSN	1556276X
Journal	Nanoscale Research Letters
Issue Number	1
Volume Number	9
Language	English
Publisher	Springer
Publisher Date	2014-01-01
Access Restriction	Open
Rights Holder	Springer
Subject Keyword	Materials Science(all) Condensed Matter Physics Research in Higher Education
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Condensed Matter Physics

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