NDLI: RF performances of inductors integrated on localized p+-type porous silicon regions

Content Provider	PubMed Central
Author	Capelle, Marie Jérôme, Billoué Poveda, Patrick Gautier, Gaël
Copyright Year	2012
Abstract	To study the influence of localized porous silicon regions on radiofrequency performances of passive devices, inductors were integrated on localized porous silicon regions, full porous silicon sheet, bulk silicon and glass substrates. In this work, a novel strong, resistant fluoropolymer mask is introduced to localize the porous silicon on the silicon wafer. Then, the quality factors and resonant frequencies obtained with the different substrates are presented. A first comparison is done between the performances of inductors integrated on same-thickness localized and full porous silicon sheet layers. The effect of the silicon regions in the decrease of performances of localized porous silicon is discussed. Then, the study shows that the localized porous silicon substrate significantly reduces losses in comparison with high-resistivity silicon or highly doped silicon bulks. These results are promising for the integration of both passive and active devices on the same silicon/porous silicon hybrid substrate.
Related Links	http://dx.doi.org/10.1186/1556-276x-7-523
Starting Page	523
File Format	PDF
ISSN	1556276X
e-ISSN	1556276X
Journal	Nanoscale Research Letters
Issue Number	1
Volume Number	7
Language	English
Publisher	Springer
Publisher Date	2012-01-01
Access Restriction	Open
Rights Holder	Springer
Subject Keyword	Materials Science(all) Condensed Matter Physics Research in Higher Education
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Condensed Matter Physics

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