NDLI: Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography

Content Provider	Paperity
Author	Stoffel, M. Pezzoli, F. Rastelli, A. Merdzhanova, T. Schmidt, O. G.
Abstract	The three-dimensional composition profiles of individual SiGe/Si(001) islands grown on planar and pit-patterned substrates are determined by atomic force microscopy (AFM)-based nanotomography. The observed differences in lateral and vertical composition gradients are correlated with the island morphology. This approach allowed us to employ AFM to simultaneously gather information on the composition and strain of SiGe islands. Our quantitative analysis demonstrates that for islands with a fixed aspect ratio, a modified geometry of the substrate provides an enhancement of the relaxation, finally leading to a reduced intermixing.
Starting Page	1073
Ending Page	1077
File Format	HTM / HTML
ISSN	19317573
DOI	10.1007/s11671-009-9360-4
Issue Number	9
Journal	Nanoscale Research Letters
Volume Number	4
e-ISSN	1556276X
Language	English
Publisher	SpringerOpen
Publisher Date	2009-06-06
Access Restriction	Open
Subject Keyword	Wet etching Sige Tomography Afm Alloying Lateral ordering Island
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Condensed Matter Physics

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Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography