NDLI: Ordered GeSi nanorings grown on patterned Si (001) substrates

Content Provider	PubMed Central
Author	Ma, Yingjie Cui, Jian Fan, Yongliang Zhong, Zhenyang Jiang, Zuimin
Copyright Year	2011
Abstract	An easy approach to fabricate ordered pattern using nanosphere lithography and reactive iron etching technology was demonstrated. Long-range ordered GeSi nanorings with 430 nm period were grown on patterned Si (001) substrates by molecular beam epitaxy. The size and shape of rings were closely associated with the size of capped GeSi quantum dots and the Si capping processes. Statistical analysis on the lateral size distribution shows that the high growth temperature and the long-term annealing can improve the uniformity of nanorings.
Related Links	http://dx.doi.org/10.1186/1556-276X-6-205
Starting Page	205
File Format	PDF
ISSN	1556276X
e-ISSN	1556276X
Journal	Nanoscale Research Letters
Issue Number	1
Volume Number	6
Language	English
Publisher	Springer
Access Restriction	Open
Rights Holder	Springer
Subject Keyword	Research in Higher Education
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Condensed Matter Physics

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Ordered GeSi nanorings grown on patterned Si (001) substrates