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Effect of grain orientations of Cu seed layers on the growth of <111>-oriented nanotwinned Cu
| Content Provider | Paperity |
|---|---|
| Author | Chen, Chih Liu, Chien-min Lin, Han-wen Lu, Chia-ling |
| Abstract | We investigate the growth of Cu films on two different Cu seed layers: one with regular <111>-oriented grains and the other with very strong <111>-preferred orientation. It is found that densely-packed nanotwinned Cu (nt-Cu) can be grown by pulsed electroplating on the strong <111>-oriented Cu seed layer without a randomly-oriented transition layer between the nt-Cu and the Cu seed layer. The electroplated nt-Cu grow almost epitaxially on the seed layer and formed <111>-oriented columnar structures. However, with the regular <111>-oriented Cu seed, there is a randomly-oriented transition layer between the nt-Cu and the regular <111>-oriented Cu seed. The results indicate that the seed layer plays a crucial role on the regularity of <111>-oriented nanotwinned Cu. |
| File Format | HTM / HTML |
| DOI | 10.1038/srep06123 |
| Journal | Scientific Reports |
| Volume Number | 4 |
| Language | English |
| Publisher | Nature Publishing Group |
| Publisher Date | 2014-08-19 |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |