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Thermal Impedance Characterization Using Optical Measurement Assisted by Multi-Physics Simulation for Multi-Chip SiC MOSFET Module
| Content Provider | MDPI |
|---|---|
| Author | Kim, Min-Ki Yoon, Sang Won |
| Copyright Year | 2020 |
| Description | In this paper, an approach to determine the thermal impedance of a multi-chip silicon carbide (SiC) power module is proposed, by fusing optical measurement and multi-physics simulations. The tested power module consists of four parallel SiC metal-oxide semiconductor field-effect transistors (MOSFETs) and four parallel SiC Schottky barrier diodes. This study mainly relies on junction temperature measurements performed using fiber optic temperature sensors instead of temperature-sensitive electrical parameters (TESPs). However, the fiber optics provide a relatively slow response compared to other available TSEP measurement methods and cannot detect fast responses. Therefore, the region corresponding to undetected signals is estimated via multi-physics simulations of the power module. This method provides a compensated cooling curve. We analyze the thermal resistance using network identification by deconvolution (NID). The estimated thermal resistance is compared to that obtained via a conventional method, and the difference is 3.8%. The proposed fusion method is accurate and reliable and does not require additional circuits or calibrations. |
| Starting Page | 1060 |
| e-ISSN | 2072666X |
| DOI | 10.3390/mi11121060 |
| Journal | Micromachines |
| Issue Number | 12 |
| Volume Number | 11 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2020-11-30 |
| Access Restriction | Open |
| Subject Keyword | Micromachines Nuclear Energy and Engineering Thermal Impedance Multi-chip Sic Mosfet Power Module |
| Content Type | Text |
| Resource Type | Article |
