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Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures
| Content Provider | MDPI |
|---|---|
| Author | Chen, Chia-Yuan Lai, Yun-Kai Lee, Kung-Yen Huang, Chih-Fang Huang, Shin-Yi |
| Copyright Year | 2021 |
| Description | This research proposes a novel 4H-SiC power device structure—different concentration floating superjunction MOSFET (DC-FSJ MOSFET). Through simulation via Synopsys Technology Computer Aided Design (TCAD) software, compared with the structural and static characteristics of the traditional vertical MOSFET, DC-FSJ MOSFET has a higher breakdown voltage (BV) and lower forward specific on-resistance $(R_{on,sp}$). The DC-FSJ MOSFET is formed by multiple epitaxial technology to create a floating P-type structure in the epitaxial layer. Then, a current spreading layer (CSL) is added to reduce the $R_{on,sp}$. The floating P-type structure depth, epitaxial layer concentration and thickness are optimized in this research. This structure can not only achieve a breakdown voltage over 3300 V, but also reduce $R_{on,sp}$. Under the same conditions, the Baliga Figure of Merit (BFOM) of DC-FSJ MOSFET increases by 27% compared with the traditional vertical MOSFET. $R_{on,sp}$ is 25% less than that of the traditional vertical MOSFET. |
| Starting Page | 756 |
| e-ISSN | 2072666X |
| DOI | 10.3390/mi12070756 |
| Journal | Micromachines |
| Issue Number | 7 |
| Volume Number | 12 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2021-06-27 |
| Access Restriction | Open |
| Subject Keyword | Micromachines Nuclear Energy and Engineering Silicon Carbide Superjunction Breakdown Voltage Specific On-resistance Mosfet 4h-sic |
| Content Type | Text |
| Resource Type | Article |
