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Design of SiC-Doped Piezoresistive Pressure Sensor for High-Temperature Applications
| Content Provider | MDPI |
|---|---|
| Author | Wejrzanowski, Tomasz Tymicki, Emil Plocinski, Tomasz Bucki, Janusz Józef Tan, Teck Leong |
| Copyright Year | 2021 |
| Description | Within these studies the piezoresistive effect was analyzed for 6H-SiC and 4H-SiC material doped with various elements: N, B, and Sc. Bulk SiC crystals with a specific concentration of dopants were fabricated by the Physical Vapor Transport (PVT) technique. For such materials, the structures and properties were analyzed using X-ray diffraction, SEM, and Hall measurements. The samples in the form of a beam were also prepared and strained (bent) to measure the resistance change (Gauge Factor). Based on the results obtained for bulk materials, piezoresistive thin films on 6H-SiC and 4H-SiC substrate were fabricated by Chemical Vapor Deposition (CVD). Such materials were shaped by Focus Ion Beam (FIB) into pressure sensors with a specific geometry. The characteristics of the sensors made from different materials under a range of pressures and temperatures were obtained and are presented herewith. |
| Starting Page | 6066 |
| e-ISSN | 14248220 |
| DOI | 10.3390/s21186066 |
| Journal | Sensors |
| Issue Number | 18 |
| Volume Number | 21 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2021-09-10 |
| Access Restriction | Open |
| Subject Keyword | Sensors Sic Piezoresistive Effect High Temperature Pressure Sensor Gauge Factor |
| Content Type | Text |
| Resource Type | Article |
