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A Novel Carbon-Assisted Chemical Vapor Deposition Growth of Large-Area Uniform Monolayer $MoS_{2}$ and $WS_{2}$
| Content Provider | MDPI |
|---|---|
| Author | Bae, Jeonghwan Yoo, Youngdong |
| Copyright Year | 2021 |
| Description | Monolayer $MoS_{2}$ can be used for various applications such as flexible optoelectronics and electronics due to its exceptional optical and electronic properties. For these applications, large-area synthesis of high-quality monolayer $MoS_{2}$ is highly desirable. However, the conventional chemical vapor deposition (CVD) method using $MoO_{3}$ and S powder has shown limitations in synthesizing high-quality monolayer $MoS_{2}$ over a large area on a substrate. In this study, we present a novel carbon cloth-assisted CVD method for large-area uniform synthesis of high-quality monolayer $MoS_{2}$. While the conventional CVD method produces thick $MoS_{2}$ films in the center of the substrate and forms $MoS_{2}$ monolayers at the edge of the thick $MoS_{2}$ films, our carbon cloth-assisted CVD method uniformly grows high-quality monolayer $MoS_{2}$ in the center of the substrate. The as-synthesized monolayer $MoS_{2}$ was characterized in detail by Raman/photoluminescence spectroscopy, atomic force microscopy, and transmission electron microscopy. We reveal the growth process of monolayer $MoS_{2}$ initiated from $MoS_{2}$ seeds by synthesizing monolayer $MoS_{2}$ with varying reaction times. In addition, we show that the CVD method employing carbon powder also produces uniform monolayer $MoS_{2}$ without forming thick $MoS_{2}$ films in the center of the substrate. This confirms that the large-area growth of monolayer $MoS_{2}$ using the carbon cloth-assisted CVD method is mainly due to reducing properties of the carbon material, rather than the effect of covering the carbon cloth. Furthermore, we demonstrate that our carbon cloth-assisted CVD method is generally applicable to large-area uniform synthesis of other monolayer transition metal dichalcogenides, including monolayer $WS_{2}$. |
| Starting Page | 2423 |
| e-ISSN | 20794991 |
| DOI | 10.3390/nano11092423 |
| Journal | Nanomaterials |
| Issue Number | 9 |
| Volume Number | 11 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2021-09-17 |
| Access Restriction | Open |
| Subject Keyword | Nanomaterials Quantum Science and Technology Carbon-assisted Cvd Growth Mechanism Monolayer Mos2 Ws2 |
| Content Type | Text |
| Resource Type | Article |
