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Growth Mechanism of Periodic-Structured $MoS_{2}$ by Transmission Electron Microscopy
| Content Provider | MDPI |
|---|---|
| Author | Mukundan, Arvind Tsao, Yu-Ming Artemkina, Sofya B. Fedorov, Vladimir E. Wang, Hsiang-Chen |
| Copyright Year | 2021 |
| Description | Molybdenum disulfide $(MoS_{2}$) was grown on a laser-processed periodic-hole sapphire substrate through chemical vapor deposition. The main purpose was to investigate the mechanism of $MoS_{2}$ growth in substrate with a periodic structure. By controlling the amount and position of the precursor, adjusting the growth temperature and time, and setting the flow rate of argon gas, $MoS_{2}$ grew in the region of the periodic holes. A series of various growth layer analyses of $MoS_{2}$ were then confirmed by Raman spectroscopy, photoluminescence spectroscopy, and atomic force microscopy. Finally, the growth mechanism was studied by transmission electron microscopy (TEM). The experimental results show that in the appropriate environment, $MoS_{2}$ can be successfully grown on substrate with periodic holes, and the number of growth layers can be determined through measurements. By observing the growth mechanism, composition analysis, and selected area electron diffraction diagram by TEM, we comprehensively understand the growth phenomenon. The results of this research can serve as a reference for the large-scale periodic growth of $MoS_{2}$. The production of periodic structures by laser drilling is advantageous, as it is relatively simpler than other methods. |
| Starting Page | 135 |
| e-ISSN | 20794991 |
| DOI | 10.3390/nano12010135 |
| Journal | Nanomaterials |
| Issue Number | 1 |
| Volume Number | 12 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2021-12-31 |
| Access Restriction | Open |
| Subject Keyword | Nanomaterials Manufacturing Engineering Chemical Vapor Deposition Periodic Growth of Mos2 Growth Mechanism of Mos2 Molybdenum Disulfide (mos2) |
| Content Type | Text |
| Resource Type | Article |
