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| Content Provider | IET Digital Library |
|---|---|
| Author | Yao, Ran Li, Hui Lai, Wei Kang, Shenyang Deng, Jili Long, Haiyan Zheng, Meimei Li, Jinyuan Li, Yaosheng |
| Abstract | Press-pack insulated gate bipolar transistor (IGBT) device is the key component in the voltage source converter high voltage direct current (VSC-HVDC) due the advantage of the short-circuit failure. However, it is difficult to analyse the IGBT short-circuit failure mode due to the complex packaging and the short failure time. This study presents a method on simulation for the short-circuit failure mode of the press-pack IGBT device. First, based on the structure of a single-chip 3.3 kV/50 A press-pack IGBT, a multi-physical field model was presented by considering the electro–mechanical–thermal coupling effects, so that the internal weak layer was found by comparing with the different sustained pressures. Then, an equivalent method is proposed by using the different aluminium–silicon reaction osmotic hole in the chip, and the models were presented to simulate the short-circuit failure. Furthermore, after short-circuit failure of the device, the thermal resistance variation of each later in press-pack IGBT device was obtained. Finally, the experiment on the steady state and the short-circuit tests were performed, by analysing the weak layer and the short-circuit failure position of the IGBT device, the proposed models and analysis were testified. The achievement is helpful to optimal design of the press-pack IGBT device to improve the VSC-HVDC converter reliability. |
| Starting Page | 2753 |
| Ending Page | 2757 |
| Page Count | 5 |
| Volume Number | 2019 |
| e-ISSN | 20513305 |
| Issue Number | Issue 16, Mar (2019) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/joe/conferences/cn-adc-2018 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/joe.2018.8668 |
| Journal | The Journal of Engineering |
| Publisher | The Institution of Engineering and Technology |
| Publisher Date | 2018-10-26 |
| Access Restriction | Open |
| Rights License | Creative Commons Attribution-Non Commercial-No Derivs License (http://creativecommons.org/licenses/by-nc-nd/3.0/) |
| Subject Keyword | Bipolar Transistor Circuit Current 50.0 A D.C. Transmission Failure Analysis Failure Stage HVDC Power Converter HVDC Power Transmission IGBT Short-circuit Failure Mode Power Converter Power Supplies to Apparatus Power Transmission Reliability Press-pack IGBT Device Reliability Short Failure Time Short-circuit Failure Position Short-circuit Tests Voltage 3.3 KV Voltage-source Converter VSC-HVDC Converter Reliability |
| Content Type | Text |
| Resource Type | Article |
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