NDLI: Inductively coupled CH4/H2 plasma etching process for mesa delineation of InAs/GaSb type-II superlattice pixels

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The Journal of Engineering

Inductively coupled CH4/H2 plasma etching process for mesa delineation of InAs/GaSb type-II superlattice pixels

Content Provider	IET Digital Library
Author	Das, Sona Das, Utpal
Abstract	An inductively coupled C H 4 / H 2 plasma etching process for delineation of InAs/GaSb type-II superlattice pixels is presented. An optimised C H 4 / H 2 etch recipe without alternate O 2 plasma cleaning step showed an etch rate as high as 0.11 μm/min that results in smooth vertical sidewalls for the type-II superlattice pixel arrays with 10 μm pitch size and 2.4 μm deep trenches. At 70 K, the dark current density for the mesa etched + SU-8 polymer passivated type-II superlattice photodiodes was found to be 0.11 A/cm2 at an applied reverse bias voltage of 0.2 V. The activation energy of 13 meV obtained from the Arrhenius plot and a variable area diode array technique showed that the measured dark current is mainly attributed to bulk tunnelling current. This technique of mesa delineation for the type-II superlattice pixel arrays with small pitch size is a viable option in realising next-generation infrared focal plane arrays.
Starting Page	753
Ending Page	756
Page Count	4
Volume Number	14
e-ISSN	17500443
Issue Number	Issue 7, Jun (2019)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/mnl/14/7
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/mnl.2018.5549
Journal	Micro & Nano Letters
Publisher Date	2019-06-26
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Arrhenius Plot Bolometers Bulk Tunnelling Current Current Density Dark Conductivity Dark Current Density Depth 2.4 Mum Detection of Radiation Electron Volt Energy 13.0 MeV Gallium Compound II-VI And III-V SemiConductor III-V SemiConductor InAs-GaSb InAs/GaSb Type-II Superlattice Pixel Array Indium Compound Inductively Coupled Methane-hydrogen Plasma Etching Process Mesa Delineation Technique Mesa Etched+SU-8 Polymer Passivated Type-II Superlattice PhotoDiode Micro-optical Device And Technology Micro-optics Next-generation Infrared Focal Plane Array Optical Array Optical Fabrication Optical Material Optical Polymers Other Organic Optical Material Passivation PhotoDetector PhotoDiode Photoelectric Cell Photoelectric Device Plasma Application in Manufacturing And Material Processing Plasma Material Processing Quantum Wells And Related Structure Semiconductor Superlattices Size 10.0 Mum Sputter Etching Submillimetre Wave Detection Surface Grinding Temperature 70.0 K Voltage 0.2 V
Content Type	Text
Resource Type	Article

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