NDLI: High-uniformity 1 × 64 linear arrays of silicon carbide avalanche photodiode

Content Provider	IET Digital Library
Author	Zhou, Xingye Tan, Xin Lv, Yuanjie Li, Jia Liang, Shixiong Feng, Zhihong Cai, Shujun
Abstract	In this Letter, high-uniformity 1 × 64 linear arrays of 4H-SiC avalanche photodiode (APD) are reported for ultraviolet detection. Multi-cycle inductively coupled plasma dry etching was adopted for the bevelled mesa formation, during which the wafers were rotated with a small angle for each cycle to suppress the process variation. As a result, a high pixel yield of 100% and a high-uniformity breakdown voltage with a fluctuation of smaller than 0.5 V are achieved for the fabricated 1 × 64 4H-SiC APD linear arrays, which is a great improvement for 4H-SiC APD arrays. Moreover, the dark currents at 95% of breakdown voltage are below 1 nA for all the 64 pixels. Besides, the pixels in the array show a multiplication gain of larger than 106 and a peak responsivity of 0.12 A/W at 285 nm (corresponding to a maximum quantum efficiency of 52%) at room temperature.
Starting Page	895
Ending Page	897
Page Count	3
ISSN	00135194
Volume Number	56
e-ISSN	1350911X
Issue Number	Issue 17, Aug (2020)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/56/17
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2020.1241
Journal	Electronics Letters
Publisher Date	2020-06-22
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	4H-silicon Carbide APD Linear Arrays 4H-silicon Carbide Avalanche Photodiode Avalanche Photodiode Bevelled Mesa Formation Bolometers Dark Currents Detection of Radiation High-uniformity Breakdown Voltage Multi-cycle Inductively Coupled Plasma Dry Etching Optical Array Optical Fabrication PhotoDetector Photoelectric Cell Photoelectric Device Plasma Dry Etching Quantum Efficiency SiC Silicon Compound Sputter Etching Submillimetre Wave Detection Surface Grinding Temperature 293 K to 298 K Ultraviolet Detection Ultraviolet Detector Wavelength 285.0 Nm Wide Band Gap SemiConductor
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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