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| Content Provider | IET Digital Library |
|---|---|
| Author | Frasca, Marco Farina, Alfonso Griffiths, Hugh |
| Abstract | It is known that Fibonacci numbers emerge from a network of voltage dividers comprising just resistors. The authors find that the same happens to a lattice of memristors as recently devised. Between the memristor dividers there is a phase coherence with respect to a sinusoidal input signal. Interestingly, they show that the effect of Gaussian distributed random noise, which adds to the voltage signal at the input of the memristor lattice, may affect the coherence. It is shown that when the signal-to-noise ratio goes below 3 dB and the number of dividers in the lattice is ten there is an abrupt reduction of phase coherence typical of non-linear systems. This behaviour does not happen with a lattice of normal resistors. A tolerance analysis of the classical resistor components as well as of the memristor parameters is also presented. |
| Starting Page | 51 |
| Ending Page | 56 |
| Page Count | 6 |
| Volume Number | 2017 |
| e-ISSN | 20513305 |
| Issue Number | Issue 3, Mar (2017) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/joe/2017/3 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/joe.2016.0302 |
| Journal | The Journal of Engineering |
| Publisher | The Institution of Engineering and Technology |
| Publisher Date | 2017-03-16 |
| Access Restriction | Open |
| Rights License | Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0/) |
| Subject Keyword | Analogue Circuit Classical Resistor Component Fibonacci Numbers Gaussian Distributed Random Noise Gaussian Distribution Input Noise Memristor Divider Memristor Lattice Memristor Parameter Memristors Nonlinear System Normal Resistor Lattice Phase Coherence Random Noise Resistor Signal to Noise Ratio Sinusoidal Input Signal Statistics Tolerance Analysis Voltage Divider Voltage Signal |
| Content Type | Text |
| Resource Type | Article |
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