NDLI: Highly mismatched III–V semiconductor alloys applied in multiple quantum well photovoltaics

Content Provider	IET Digital Library
Author	Xiong, Wanshu Broderick, Christopher A. Rorison, Judy M.
Abstract	Adding dilute concentrations of nitrogen (N) or bismuth (Bi) into conventional III–V semiconductor alloys causes a large bowing of the bandgap energy due to the modification of the electronic band structure. This behaviour has attracted significant interest due to the resulting optical and electronic properties. Firstly, the authors present theoretical band structure models for GaAs-based dilute nitride, dilute bismide and dilute bismide-nitride alloys and then use them within current continuity equations to show the photovoltaic behaviour. To describe the band structures of these highly mismatched III–V semiconductor alloys, the authors introduce a 10-, 12- and 14-band k ⋅ p Hamiltonian for dilute nitride, dilute bismide and dilute bismide-nitride semiconductors, respectively. The authors then use this approach to analyse GaBiAs multi-quantum well p-i-n structures for photovoltaic performance. Through theoretical analysis the authors can: (i) elucidate important trends in the properties and photovoltaic performance of GaBiAs QW structures and (ii) comment generally on the suitability of GaBiAs alloys and heterostructures for applications in multi-junction solar cells. In particular, the authors identify and quantify the limitations associated with current GaBiAs solar cells, and describe the improvements in performance that can be expected pending further development of this emerging class of devices.
Starting Page	15
Ending Page	19
Page Count	5
ISSN	17518768
Volume Number	12
e-ISSN	17518776
Issue Number	Issue 1, Feb (2018)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-opt/12/1
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-opt.2017.0091
Journal	IET Optoelectronics
Publisher Date	2017-09-07
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Arsenic Alloys Bandgap Energy Bismuth Alloys Continuity Equation Dilute Bismide Dilute Bismide-nitride Alloys Dilute Nitride Electronic Band Structure Electronic Property Energy Gap GaBiAs-GaAs Gallium Alloy Gallium Arsenide Highly Mismatched III–V Semiconductor Alloys III-V SemiConductor Integrated Optics Integrated Optoelectronics K∙p Hamiltonian Multijunction Solar Cell Multiple Quantum Well Photovoltaics Multiquantum Well P-i-n Structure Optical Property Optical Property of II-VI And III-V SemiConductor P-i-n PhotoDiode Photoelectric Conversion Photoelectric Device Photovoltaic Cell Quantum Well Device Semiconductor Quantum Wells Solar Cell And Array
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering

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