NDLI: Broadband complementary metal-oxide semiconductor single-pole-double-throw switch with improved power handling capability using dual-gate metal-oxide semiconductor field-effect transistors

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Broadband complementary metal-oxide semiconductor single-pole-double-throw switch with improved power handling capability using dual-gate metal-oxide semiconductor field-effect transistors

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Broadband complementary metal-oxide semiconductor single-pole-double-throw switch with improved power handling capability using dual-gate metal-oxide semiconductor field-effect transistors

Content Provider	IET Digital Library
Author	Huang, Fan Hsiu Hsin, Yue Ming
Abstract	A broadband complementary metal-oxide semiconductor (CMOS) single-pole-double-throw (SPDT) switch based on a travelling-wave design with using dual-gate N-type metal-oxide semiconductor (NMOS) transistors is implemented in a 0.18 μm CMOS process for millimetre-wave applications. To further investigate the power handling capability in a dual-gate metal-oxide semiconductor field-effect transistor (MOSFET), this study analyses the mechanism of voltage swing distribution by using the proposed large-signal cascode model. Considering the parasitic gate-to-gate capacitance and the substrate effect, the simulations in this study can accurately predict the small-signal and power handling performances of the SPDT switch. The switch exhibits a measured 1 dB bandwidth of ∼51 GHz, ranging from 16 to 67 GHz with an insertion loss of 3.6 dB at 30 GHz. The measured isolation is also better than 22 dB. The measured power handling capability can achieve a 1 dB compression point at an input power of 23.8 dBm at 30 GHz with a negative body bias, and the simulation result shows a 1 dB compression point nearly 24 dBm. Based on the proposed model, the large-signal performances under different body biases can be significantly predicted when including the parasitic gate-to-gate capacitance in a dual-gate MOSFET.
Starting Page	502
Ending Page	507
Page Count	6
ISSN	17518725
Volume Number	9
e-ISSN	17518733
Issue Number	Issue 6, Apr (2015)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-map/9/6
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-map.2013.0463
Journal	IET Microwaves, Antennas & Propagation
Publisher Date	2015-02-18
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Broadband Complementary Metal-oxide Semiconductor Single-pole-double-throw Switch CMOS Integrated Circuit CMOS Single-pole-double-throw Switch Dual-gate Metal-oxide Semiconductor Field-effect Transistors Dual-gate MOSFET Dual-gate NMOS Transistors Frequency 16 GHz to 67 GHz Insulated Gate Field Effect Transistors Large-signal Cascode Model Millimetre-wave Application MOSFET Parasitic Gate-to-gate Capacitance Power Handling Capability Radio Communication Radio Link And Equipment Substrate Effect Travelling-wave Design Voltage Distribution Voltage Swing Distribution
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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Broadband complementary metal-oxide semiconductor single-pole-double-throw switch with improved power handling capability using dual-gate metal-oxide semiconductor field-effect transistors

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Broadband complementary metal-oxide semiconductor single-pole-double-throw switch with improved power handling capability using dual-gate metal-oxide semiconductor field-effect transistors