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| Content Provider | IET Digital Library |
|---|---|
| Author | Gu, Liming Che, Wenquan Chen, Shichang Cai, Qi Zhang, Mi Xue, Quan |
| Abstract | This study presents a novel dual-band DC biasing network and its application in the design of GaN power amplifiers (PAs). By integrating offset double-sided parallel strip line which can easily realise high characteristic impedance and thus narrow microstrip line, the proposed biasing network can obtain much higher operation frequency ratio than the conventional design. To demonstrate the new methodology, two dual-band GaN PAs applying the presented dual-band DC biasing network are implemented. The operation frequencies are 1.8/3.5 and 0.9/3.5 GHz. Three-section networks for complex load are used for dual-frequency input and output matching. Good agreement between the simulation and measurement is observed, which fully demonstrate the feasibility and validity of the presented DC bias networks in power amplifier designs. |
| Starting Page | 271 |
| Ending Page | 275 |
| Page Count | 5 |
| ISSN | 17518725 |
| Volume Number | 10 |
| e-ISSN | 17518733 |
| Issue Number | Issue 3, Feb (2016) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/iet-map/10/3 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/iet-map.2015.0272 |
| Journal | IET Microwaves, Antennas & Propagation |
| Publisher Date | 2016-02-19 |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | Amplifiers Dual Band DC Biasing Network Dual Band GaN Power Amplifiers Dual-frequency Input Narrow Microstrip Line Novel DC Biasing Network Offset Double Sided Parallel Strip Line Output Matching Power Amplifier Strip Line Circuit Waveguide And Microwave Transmission Line Component |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electrical and Electronic Engineering |
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