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Dual-Band, Dual-Output Power Amplifier Using Simplified Three-Port, Frequency-Dividing Matching Network
| Content Provider | MDPI |
|---|---|
| Author | Chen, Xiaopan Wu, Yongle Wang, Weimin |
| Copyright Year | 2022 |
| Description | This study presents a dual-band power amplifier (PA) with two output ports using a simplified three-port, frequency-dividing matching network. The dual-band, dual-output PA could amplify a dual-band signal with one transistor, and the diplexer-like output matching network (OMN) divided the two bands into different output ports. A structure consisting of a λ/4 open stub and a λ/4 transmission line was applied to restrain undesired signals, which made each branch equivalent to an open circuit at another frequency. A three-stub design reduced the complexity of the OMN. Second-order harmonic impedances were tuned for better efficiency. The PA was designed with a 10-W gallium nitride high electron mobility transistor (GaN HEMT). It achieved a drain efficiency (DE) of 55.84% and 53.77%, with the corresponding output power of 40.22 and 40.77 dBm at 3.5 and 5.0 GHz, respectively. The 40%-DE bandwidths were over 200 MHz in the two bands. |
| Starting Page | 144 |
| e-ISSN | 20799292 |
| DOI | 10.3390/electronics11010144 |
| Journal | Electronics |
| Issue Number | 1 |
| Volume Number | 11 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2022-01-04 |
| Access Restriction | Open |
| Subject Keyword | Electronics Dual-band Dual-output Gallium Nitride (gan) Harmonic Control Power Amplifier (pa) Restraining Network |
| Content Type | Text |
| Resource Type | Article |
